参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.7 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4.2 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance45 mOhms
Typical Turn-Off Delay Time22.7 ns
Package / CaseX2-DFN2015-3
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated DMP2045UFY4-7
SubcategoryMOSFETs
Qg - Gate Charge6.8 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V 24V X2-DFN2015-3 T&R 3K
Product TypeMOSFET
MXHTS85412999
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.846575 oz
Fall Time9.6 ns
CNHTS8541290000
Pd - Power Dissipation1.49 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time3.4 ns