参数项参数值
参数项参数值
Forward Transconductance - Min130 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current85 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance12 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge110 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time35 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRFS4321TRLPBF
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity800
Product TypeMOSFET
Pd - Power Dissipation350 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET MOSFT 100V 96A 10mOhm 120nC Qg
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel