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IPD180N10N3GATMA1
厂牌：Infineon(英飞凌)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000048586787
描述：Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min20 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySi
Id - Continuous Drain Current43 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Width6.22 mm
Rds On - Drain-Source Resistance18 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge25 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPD180N10N3GATMA1
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time5 ns
BrandInfineon Technologies
ManufacturerInfineon
Factory Pack Quantity2500
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET MV POWER MOS
Pd - Power Dissipation71 W
Part # AliasesIPD180N10N3 G SP000900132
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time12 ns