SUM110N10-09-E3

SUM110N10-09-E3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048588586

描述：Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAKMOSFET 100V 110A 375W

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min25 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current110 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Length10.67 mm

Height4.83 mm

Typical Turn-On Delay Time20 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

RoHS Details

Rds On - Drain-Source Resistance9.5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time55 ns

Factory Pack Quantity800

Package / CaseTO-263-3

ImageVishay / Siliconix SUM110N10-09-E3

BrandVishay / Siliconix

Width9.65 mm

TARIC8541290000

Mounting StyleSMD/SMT

ManufacturerVishay

Maximum Operating Temperature+ 175 C

PackagingMouseReel

PackagingReel

PackagingCut Tape

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET 100V 110A 375W

Qg - Gate Charge110 nC

MXHTS85412999

Product TypeMOSFET

SeriesSUM

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.050717 oz

Fall Time130 ns

CNHTS8541290000

Pd - Power Dissipation375 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time125 ns

Moisture Sensitivity Level1 (Unlimited)