IPD220N06L3 G

IPD220N06L3 G

厂牌：Infineon(英飞凌)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000048589468

描述：MOSFET N-CH 60V 30A TO252-3

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min16 s

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.7 V

TechnologySi

Id - Continuous Drain Current30 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time9 ns

Width6.22 mm

Rds On - Drain-Source Resistance22 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time19 ns

Height2.3 mm

Length6.5 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge10 nC

Mounting StyleSMD/SMT

Package / CaseTO-252-3

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

CNHTS8541290000

BrandInfineon Technologies

Factory Pack Quantity2500

ManufacturerInfineon

Channel ModeEnhancement

SeriesOptiMOS 3

TARIC8541290000

Product CategoryMOSFET

RoHS Details

DescriptionMOSFET N-Ch 60V 30A DPAK-2 OptiMOS 3

ImageInfineon Technologies IPD220N06L3 G

Fall Time3 ns

Product TypeMOSFET

SubcategoryMOSFETs

Unit Weight0.139332 oz

Part # AliasesSP000453644 IPD22N6L3GXT IPD220N06L3GBTMA1

USHTS8541290095

Pd - Power Dissipation36 W

TradenameOptiMOS

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time3 ns