参数项参数值
参数项参数值
Forward Transconductance - Min90 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance3.6 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time110 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge150 nC
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 50 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Factory Pack Quantity3000
CNHTS8541290000
BrandVishay Semiconductors
SeriesSI7
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerVishay
DescriptionMOSFET -20V Vds 12V Vgs PowerPAK 1212-8S
ImageVishay Semiconductors SI7655ADN-T1-GE3
Fall Time25 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation57 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)