SIA449DJ-T1-GE3

SIA449DJ-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000048589987

描述：Single P-Channel 30 V 0.038 Ohm 35 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L

下载数据手册

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min31 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current12 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 12 V, + 12 V

Typical Turn-On Delay Time8 ns

Rds On - Drain-Source Resistance15.5 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time39 ns

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge72 nC

Mounting StyleSMD/SMT

Package / CasePowerPAK-SC70-6

JPHTS8541290100

CAHTS8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CNHTS8541290000

Factory Pack Quantity3000

BrandVishay Semiconductors

SeriesSIA

Channel ModeEnhancement

Product TypeMOSFET

DescriptionMOSFET -30V Vds 12V Vgs PowerPAK SC-70

ManufacturerVishay

TARIC8541290000

ImageVishay Semiconductors SIA449DJ-T1-GE3

Product CategoryMOSFET

Fall Time8 ns

RoHS Details

Unit Weight0.001446 oz

SubcategoryMOSFETs

Pd - Power Dissipation19 W

USHTS8541290095

TradenameTrenchFET, PowerPAK

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time10 ns