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NDS352AP
厂牌：ON(安森美)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000048593773
描述：MOSFET P-CH 30V 900MA SSOT3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current900 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns, 8 ns
MXHTS85412101
Rds On - Drain-Source Resistance500 MOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
Width1.4 mm
Height1.12 mm
Length2.9 mm
KRHTS8541219000
Qg - Gate Charge3 nC
Package / CaseSSOT-3
CNHTS8541210000
ProductMOSFET Small Signal
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time17 ns, 16 ns
ImageON Semiconductor / Fairchild NDS352AP
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesNDS352AP
Unit Weight0.001058 oz
ManufacturerON Semiconductor
BrandON Semiconductor / Fairchild
DescriptionMOSFET P-Ch LL FET Enhancement Mode
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation500 mW
Part # AliasesNDS352AP_NL
SubcategoryMOSFETs
USHTS8541210095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time17 ns, 16 ns