参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current6.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time3.4 ns
Rds On - Drain-Source Resistance25 MOhms
Typical Turn-Off Delay Time17.6 ns
MXHTS85412999
Qg - Gate Charge12.3 nC
Package / CaseU-DFN2020-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time9.3 ns
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000229 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation1.6 W
ImageDiodes Incorporated DMN2025UFDF-7
Factory Pack Quantity3000
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time5.4 ns
DescriptionMOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K
USHTS8541290095