参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current15 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time4.1 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.5 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseTSSOP-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge15 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN3020UTS-13
Factory Pack Quantity2500
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30V
Channel ModeEnhancement
Fall Time3.2 ns
USHTS8541210095
Unit Weight3.439211 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.8 ns