参数项参数值
参数项参数值
Forward Transconductance - Min30 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current17 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11.4 ns
MXHTS85412101
CNHTS8541210000
Rds On - Drain-Source Resistance8 mOhms
KRHTS8541219000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time260.7 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseTO-252-3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge59.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMP3010LK3-13
Factory Pack Quantity2500
SeriesDMP3010
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V-30 V-30V TO252 T&R 2.5K
Channel ModeEnhancement
Fall Time99.3 ns
USHTS8541210095
Unit Weight0.139332 oz
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9.4 ns