参数项参数值
参数项参数值
Forward Transconductance - Min200 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current340 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time2.1 ns
MXHTS85412999
CNHTS8541290000
KRHTS8541299000
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14.4 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-323-3
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge400 pC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V-60V
Channel ModeEnhancement
Fall Time8.4 ns
USHTS8541210095
Unit Weight0.634931 oz
Pd - Power Dissipation440 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time1.8 ns