参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current7.44 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
CNHTS8541210000
Typical Turn-On Delay Time5.03 ns
MXHTS85412101
Rds On - Drain-Source Resistance11 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.33 ns
KRHTS8541219000
JPHTS8541210101
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseDFN3030-8
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge9.47 nC
BrandDiodes Incorporated
TARIC8541210000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMG4800LFG-7
Product CategoryMOSFET
RoHS Details
SeriesDMG4800
DescriptionMOSFET ENHANCE MODE MOSFET 30V/4.82 - 7.44A
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time8.55 ns
USHTS8541210095
Unit Weight1.820136 oz
Pd - Power Dissipation940 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.5 ns