参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min120
Width0.6 mm
Height0.47 mm
MXHTS85412101
Length1 mm
KRHTS8541219000
Package / CaseDFN-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated 2DC4617QLP-7
TARIC8541210000
Unit Weight0.095240 oz
RoHS Details
Series2DC46
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation250 mW
BrandDiodes Incorporated
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 250mW 50V
ManufacturerDiodes Incorporated
USHTS8541210095