参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Width0.6 mm
Height0.35 mm
Length1 mm
Package / CaseX1-DFN1006-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
ProductMOSFET Small Signal
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.105822 oz
ImageDiodes Incorporated DMN32D2LFB4-7
Pd - Power Dissipation350 mW
RoHS Details
Factory Pack Quantity3000
SeriesDMN32
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Product TypeMOSFET
Number of Channels1 Channel
DescriptionMOSFET 350mW 30Vdss
SubcategoryMOSFETs
Moisture Sensitivity Level1 (Unlimited)