参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current90 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height1 mm
Typical Turn-On Delay Time9.9 ns
Length5.8 mm
Rds On - Drain-Source Resistance2.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time53.5 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CasePowerDI5060-8
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Qg - Gate Charge96.3 nC
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity2500
ImageDiodes Incorporated DMT6004LPS-13
RoHS Details
Product CategoryMOSFET
SeriesDMT6004
DescriptionMOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time32.9 ns
Unit Weight0.003386 oz
TradenamePowerDI
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time17.7 ns