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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage500 mV
Width2.6 mm
Height1.5 mm
Length4.6 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
Pd - Power Dissipation1000 mW
SeriesBCX56
BrandDiodes Incorporated
ImageDiodes Incorporated BCX5610TA
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Moisture Sensitivity Level1 (Unlimited)