参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current-
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
TARIC8541210000
RoHS Details
Unit Weight0.000280 oz
Pd - Power Dissipation300 mW
BrandPanjit
ImagePanjit BC847BS_R1_00001
ManufacturerPanjit
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT /47S/TR/7"/HF/3K/SOT-363/TRA/SOT/DT-02TSN/DT02-QI03/PJ///
Moisture Sensitivity Level1 (Unlimited)