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IPD30N06S215ATMA2
厂牌：Infineon Technologies
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000049006703
描述：N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min-
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time13 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge41 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time19 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPD30N06S215ATMA2
Unit Weight0.139332 oz
Factory Pack Quantity2500
Pd - Power Dissipation136 W
BrandInfineon Technologies
Product TypeMOSFET
Part # AliasesIPD30N06S2-15 SP001061724
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFET_)40V 60V)
Vds - Drain-Source Breakdown Voltage55 V
USHTS8541290095
Number of Channels1 Channel
Rise Time28 ns
Moisture Sensitivity Level1 (Unlimited)