SI7852DP-T1-E3

SI7852DP-T1-E3

厂牌：Vishay

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049011888

描述：MOSFET N-CH 80V 7.6A PPAK 8SOIC

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min25 S

TechnologySi

Vgs th - Gate-Source Threshold Voltage2 V

Transistor PolarityN-Channel

Id - Continuous Drain Current12.5 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 20 V, + 20 V

JPHTS8541210101

CAHTS8541210000

Product CategoryMOSFET

Minimum Operating Temperature- 55 C

Typical Turn-On Delay Time17 ns

Transistor Type1 N-Channel

Typical Turn-Off Delay Time40 ns

Maximum Operating Temperature+ 150 C

Package / CasePowerPAK-SO-8

PackagingMouseReel

PackagingReel

PackagingCut Tape

DescriptionMOSFET 80V Vds 20V Vgs PowerPAK SO-8

Mounting StyleSMD/SMT

TARIC8541290000

Factory Pack Quantity3000

ManufacturerVishay

Product TypeMOSFET

BrandVishay Semiconductors

Qg - Gate Charge41 nC

RoHS Details

MXHTS85412101

SubcategoryMOSFETs

SeriesSI7

USHTS8541290095

Channel ModeEnhancement

Fall Time31 ns

Unit Weight0.017870 oz

CNHTS8541210000

Part # AliasesSI7852DP-E3

Pd - Power Dissipation5.2 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage80 V

Number of Channels1 Channel

Rise Time11 ns