参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT170 MHz
ConfigurationSingle
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1000 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
TechnologySi
Transistor PolarityNPN
KRHTS8541219000
Emitter- Base Voltage VEBO5 V
JPHTS8541290100
CAHTS8541290000
ImageInfineon Technologies BC817K16E6327HTSA1
Product CategoryBipolar Transistors - BJT
Collector-Emitter Saturation Voltage0.7 V
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DescriptionBipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A
DC Collector/Base Gain hfe Min100
PackagingCut Tape
PackagingMouseReel
PackagingReel
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandInfineon Technologies
Factory Pack Quantity3000
ManufacturerInfineon
MXHTS85412999
SeriesBC817
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541290000
Part # AliasesBC 817K-16 E6327 SP000271788
Pd - Power Dissipation500 mW