参数项参数值
参数项参数值
Forward Transconductance - Min5.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current1.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.1 ns
Width3.5 mm
Height1.6 mm
Rds On - Drain-Source Resistance172 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47.3 ns
MXHTS85412999
Length6.5 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge9.5 nC
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageInfineon Technologies BSP372N H6327
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
Fall Time18 ns
SeriesBSP372
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET SMALL SIGNAL N-CH
Unit Weight0.003951 oz
BrandInfineon Technologies
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Part # AliasesSP001059326 BSP372NH6327XTSA1
Pd - Power Dissipation1.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time6.7 ns