参数项参数值
参数项参数值
Forward Transconductance - Min5.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current1.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.1 ns
Width3.5 mm
Rds On - Drain-Source Resistance172 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47.3 ns
Height1.6 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge9.5 nC
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageInfineon Technologies BSP372NH6327XTSA1
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time18 ns
Product TypeMOSFET
Factory Pack Quantity1000
ManufacturerInfineon
Unit Weight0.003951 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET SMALL SIGNAL N-CH
Part # AliasesBSP372N H6327 SP001059326
Pd - Power Dissipation1.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time6.7 ns
Moisture Sensitivity Level1 (Unlimited)