参数项参数值
参数项参数值
Forward Transconductance - Min8.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage0.95 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.5 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time5.8 ns
Width1.3 mm
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2.1 nC
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageInfineon Technologies BSS205N H6327
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time2.4 ns
Product TypeMOSFET
SeriesBSS205
ManufacturerInfineon
Unit Weight0.000282 oz
Factory Pack Quantity3000
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET N-Ch 20V 2.5A SOT-23-3
Part # AliasesBSS25NH6327XT SP000929180 BSS205NH6327XTSA1
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time2.9 ns