参数项参数值
参数项参数值
Forward Transconductance - Min8.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage0.95 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
QualificationAEC-Q101
Typical Turn-On Delay Time5.8 ns
Width1.3 mm
Height1.1 mm
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge2.1 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
TARIC8541290000
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryMOSFETs
ImageInfineon Technologies BSS205NH6327XT
Channel ModeEnhancement
BrandInfineon Technologies
Fall Time2.4 ns
Product TypeMOSFET
ManufacturerInfineon
SeriesBSS205
USHTS8541290095
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 20V 2.5A SOT-23-3
Part # AliasesSP000929180 BSS205NH6327XTSA1
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time2.9 ns