参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min150
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity10000
CNHTS8541210000
BrandON Semiconductor
SeriesBC847BP
ManufacturerON Semiconductor
TARIC8532240000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
ImageON Semiconductor BC847BPDW1T3G
RoHS Details
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Unit Weight0.000212 oz
USHTS8541210095
Pd - Power Dissipation380 mW
Moisture Sensitivity Level1 (Unlimited)