参数项参数值
参数项参数值
tariffCode85412900
Power Dissipation P Channel266mW
rohsCompliantYES
Transistor PolarityN Channel
Power Dissipation N Channel266mW
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.7V
No. of Pins6Pins
usEccnEAR99
Drain Source On State Resistance P Channel1ohm
Automotive Qualification Standard-
Drain Source Voltage Vds60V
MSLMSL 1 - Unlimited
Drain Source On State Resistance N Channel1ohm
Product Range-
euEccnNLR
Channel TypeN Channel
Qualification-
On Resistance Rds(on)1ohm
Power Dissipation Pd266mW
productTraceabilityNo
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel304mA
Continuous Drain Current Id304mA
Continuous Drain Current Id P Channel304mA
Operating Temperature Max150°C
Transistor MountingSurface Mount
Drain Source Voltage Vds N Channel60V
SVHCNo SVHC (17-Jan-2023)
Moisture Sensitivity Level1 (Unlimited)