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BSC123N08NS3G
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000049057664
描述：MOSFET N-CH 80V 55A TDSON-8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min22 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current55 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Width5.15 mm
Rds On - Drain-Source Resistance10.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Height1.27 mm
Length5.9 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge25 nC
Mounting StyleSMD/SMT
Package / CaseTDSON-8
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity5000
BrandInfineon Technologies
SeriesOptiMOS 3
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
ManufacturerInfineon
TARIC8541290000
ImageInfineon Technologies BSC123N08NS3 G
Product CategoryMOSFET
Fall Time4 ns
RoHS Details
Unit Weight0.003527 oz
SubcategoryMOSFETs
Part # AliasesBSC123N8NS3GXT SP000443916 BSC123N08NS3GATMA1
Pd - Power Dissipation66 W
USHTS8541290095
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time18 ns