SI2319DDS-T1-GE3

SI2319DDS-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049063278

描述：dbm供货查询数据MOSFET -40V Vds 20V Vgs SOT-23

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min10 s

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current3.6 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time10 ns

Rds On - Drain-Source Resistance75 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time20 ns

MXHTS85412999

Qg - Gate Charge12.5 nC

Package / CaseSOT-23-3

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

CAHTS8541290000

Minimum Operating Temperature- 55 C

Fall Time12 ns

CNHTS8541290000

PackagingCut Tape

PackagingReel

TARIC8541290000

Unit Weight0.003397 oz

Pd - Power Dissipation1.7 W

BrandVishay / Siliconix

ImageVishay / Siliconix SI2319DDS-T1-GE3

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

Vds - Drain-Source Breakdown Voltage40 V

ManufacturerVishay

Product CategoryMOSFET

Number of Channels1 Channel

USHTS8541290095

Rise Time20 ns

DescriptionMOSFET -40V Vds 20V Vgs SOT-23