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SI2305CDS-T1-GE3
厂牌：Vishay
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000049063626
描述：MOSFET P-CH 8V 5.8A SOT23-3
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min17 S
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current5.8 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
Length2.9 mm
Height1.45 mm
JPHTS8541210101
Typical Turn-On Delay Time20 ns
CAHTS8541210000
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
RoHS Details
Package / CaseSOT-23-3
ImageVishay Semiconductors SI2305CDS-T1-GE3
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Width1.6 mm
TARIC8541290000
BrandVishay Semiconductors
SubcategoryMOSFETs
Mounting StyleSMD/SMT
Product CategoryMOSFET
ManufacturerVishay
DescriptionMOSFET -8V Vds 8V Vgs SOT-23
Qg - Gate Charge30 nC
MXHTS85412101
SeriesSI2
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time10 ns
CNHTS8541290000
Part # AliasesSI2305CDS-GE3
Pd - Power Dissipation1.7 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage8 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)