参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Minimum Operating Temperature- 50 C
Transistor PolarityN-Channel
Id - Continuous Drain Current35 A
JPHTS8541290100
Vgs - Gate-Source Voltage- 20 V, + 20 V
CAHTS8541290000
ImageVishay Semiconductors SI7114ADN-T1-GE3
Product CategoryMOSFET
Rds On - Drain-Source Resistance7.5 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
PackagingMouseReel
PackagingCut Tape
PackagingReel
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Factory Pack Quantity3000
Qg - Gate Charge32 nC
MXHTS85423999
Product TypeMOSFET
SeriesSI7
ManufacturerVishay
RoHS Details
SubcategoryMOSFETs
USHTS8542390001
Channel ModeEnhancement
Unit Weight0.006743 oz
CNHTS8541210000
Part # AliasesSI7114ADN-GE3
Pd - Power Dissipation39 W
TradenameTrenchFET
Number of Channels1 Channel