参数项参数值
参数项参数值
tariffCode85412900
rohsCompliantYES
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max4V
No. of Pins3Pins
usEccnEAR99
Drain Source Voltage Vds100V
MSLMSL 1 - Unlimited
Product RangeHEXFET
euEccnNLR
Channel TypeP Channel
Power Dissipation79W
Qualification-
productTraceabilityNo
Continuous Drain Current Id14A
Operating Temperature Max175°C
Transistor MountingSurface Mount
Drain Source On State Resistance0.2ohm
SVHCNo SVHC (17-Jan-2023)
Moisture Sensitivity Level1 (Unlimited)