参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5.7 S
Vgs th - Gate-Source Threshold Voltage- 1.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current6 A
Minimum Operating Temperature- 55 C
ImageToshiba SSM3J372R,LF
Vgs - Gate-Source Voltage- 12 V, + 6 V
QualificationAEC-Q101
DescriptionMOSFET P-CHANNEL VDSS:-30V VGSS:-12/+
Typical Turn-On Delay Time15 ns
Transistor Type1 P-Channel
Package / CaseSOT-23F-3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Product CategoryMOSFET
Mounting StyleSMD/SMT
BrandToshiba
Product TypeMOSFET
SeriesSSM3J372R
ManufacturerToshiba
TARIC8541290000
Qg - Gate Charge8.2 nC
RoHS Details
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Unit Weight0.000388 oz
CNHTS8541290000
Pd - Power Dissipation2 W
TradenameU-MOSVI
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)