参数项参数值
参数项参数值
Forward Transconductance - Min0.55 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5.5 V
TechnologySi
Id - Continuous Drain Current900 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time6 ns
Width1.5 mm
Height1.1 mm
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.5 ns
Length3 mm
Qg - Gate Charge4.5 nC
Package / CaseTSOP-6
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
RoHS Details
ImageInfineon / IR IRF5802TRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time9.2 ns
BrandInfineon / IR
Factory Pack Quantity3000
Unit Weight0.000705 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC
ManufacturerInfineon
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time1.6 ns