参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current39 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Rds On - Drain-Source Resistance30 mOhms
Transistor Type1 N-Channel
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRLR2908TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation120 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 80V 1 N-CH HEXFET 28mOhms 22nC
Vds - Drain-Source Breakdown Voltage80 V
USHTS8541290095
Number of Channels1 Channel