参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current34 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.3 ns
Rds On - Drain-Source Resistance55 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Width5 mm
Height0.83 mm
Length6 mm
Qg - Gate Charge11 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time6 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRFH5020TRPBF
RoHS Details
Unit Weight0.010402 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation3.6 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 200V 1 N-CH HEXFET 55mOhms 11nC
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time7.7 ns