参数项参数值
参数项参数值
Forward Transconductance - Min149 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.9 V
TechnologySi
Id - Continuous Drain Current159 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance2.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time53 ns
MXHTS85412999
Width5 mm
Height0.83 mm
Length6 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge92 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time42 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFH7440TRPBF
Product CategoryMOSFET
Unit Weight0.006808 oz
SubcategoryMOSFETs
Factory Pack Quantity4000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation104 W
USHTS8541290095
DescriptionMOSFET 40V 85A 2.4mOhm 92nC STrongIRFET
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time45 ns
Moisture Sensitivity Level1 (Unlimited)