参数项参数值
参数项参数值
Forward Transconductance - Min8.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current5.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.4 ns
Rds On - Drain-Source Resistance34 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
MXHTS85412999
Width3.9 mm
Height1.75 mm
KRHTS8541299000
CNHTS8541210000
Qg - Gate Charge25 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time8.3 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF7815TRPBF
Product CategoryMOSFET
Unit Weight0.017870 oz
Factory Pack Quantity4000
SubcategoryMOSFETs
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation2.5 W
USHTS8541290095
DescriptionMOSFET MOSFT 150V 5A 44mOhm 25nC Qg
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time3.2 ns