参数项参数值
参数项参数值
Forward Transconductance - Min280 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.8 V
TechnologySi
Id - Continuous Drain Current270 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance700 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Width7.1 mm
Height0.74 mm
MXHTS85412999
Length9.15 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge220 nC
Package / CaseDirectFET-L8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time42 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF7739L1TRPBF
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation125 W
USHTS8541290095
DescriptionMOSFET 40V N-Ch 270A 1.0 mOhm 220nC
Vds - Drain-Source Breakdown Voltage40 V
TradenameDirectFET
Number of Channels1 Channel
Rise Time71 ns