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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min34 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current16 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.7 ns
Rds On - Drain-Source Resistance9.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
Width3.95 mm
Height0.7 mm
Length4.85 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge11 nC
Moisture SensitiveYes
Package / CaseDirectFET-ST
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time4.5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon / IR IRF6623TRPBF
Unit Weight0.008748 oz
Factory Pack Quantity4800
Pd - Power Dissipation42 W
BrandInfineon / IR
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 20V 1 N-CH 5.7mOhm DirectFET 11nC
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
Number of Channels1 Channel
Rise Time40 ns