参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current67 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
Width5.05 mm
MXHTS85412999
Height0.7 mm
Length6.35 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge24 nC
Moisture SensitiveYes
Package / CaseDirectFET-MZ
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time8.7 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRF6674TRPBF
Product CategoryMOSFET
Unit Weight0.011247 oz
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity4800
Product TypeMOSFET
Pd - Power Dissipation89 W
USHTS8541290095
DescriptionMOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
Vds - Drain-Source Breakdown Voltage60 V
TradenameDirectFET
Number of Channels1 Channel
Rise Time12 ns