参数项参数值
参数项参数值
Forward Transconductance - Min4.3 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current3.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance73 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time41 ns
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge15 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time17 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageInfineon / IR IRF7380TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT DUAL NCh 80V 3.6A
Vds - Drain-Source Breakdown Voltage80 V
USHTS8541290095
Number of Channels2 Channel
Rise Time10 ns