参数项参数值
参数项参数值
Forward Transconductance - Min2.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time9.3 ns
Rds On - Drain-Source Resistance540 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge6.1 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageVishay Semiconductors IRLR110TRPBF
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
Channel ModeEnhancement
Fall Time17 ns
SubcategoryMOSFETs
Factory Pack Quantity2000
Product CategoryMOSFET
BrandVishay Semiconductors
Product TypeMOSFET
Unit Weight0.050717 oz
ManufacturerVishay
USHTS8541290095
Pd - Power Dissipation25 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time47 ns
Moisture Sensitivity Level1 (Unlimited)