参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current2.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Transistor Type1 N-Channel
Width3.5 mm
Height1.6 mm
MXHTS85412999
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge19 nC
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageInfineon Technologies IRFL4315TRPBF
TARIC8541290000
Unit Weight0.003951 oz
RoHS Details
Factory Pack Quantity2500
Product TypeMOSFET
Pd - Power Dissipation2.8 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 150V 2.6A 185mOhm 12nC
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)