参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current4 A
JPHTS8541210101
Vgs - Gate-Source Voltage- 8 V, + 8 V
CAHTS8541210000
ImageVishay Semiconductors SI5515CDC-T1-GE3
Rds On - Drain-Source Resistance36 mOhms, 100 mOhms
Product CategoryMOSFET
DescriptionMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
Maximum Operating Temperature+ 150 C
Package / CaseChipFET-8
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity3000
Mounting StyleSMD/SMT
RoHS Details
TARIC8541290000
BrandVishay Semiconductors
Qg - Gate Charge11.3 nC, 11 nC
MXHTS85412101
ManufacturerVishay
SeriesSI54
Product TypeMOSFET
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002998 oz
CNHTS8541210000
Part # AliasesSI5515CDC-GE3
Pd - Power Dissipation3.1 W
TradenameTrenchFET
Number of Channels2 Channel