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ZXMN10A08E6TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049272841
描述：场效应管(MOSFET) 1.1W 100V 1.5A 1个N沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current1.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.4 ns
Width1.8 mm
Height1.3 mm
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8 ns
MXHTS85412101
Length3.1 mm
KRHTS8541299000
JPHTS8541210101
CAHTS8541210000
Qg - Gate Charge7.7 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541290000
ImageDiodes Incorporated ZXMN10A08E6TA
TARIC8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Channel ModeEnhancement
Fall Time2.2 ns
SeriesZXMN10A
SubcategoryMOSFETs
Factory Pack Quantity3000
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000529 oz
Product TypeMOSFET
DescriptionMOSFET 100V N-Chnl UMOS
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1.1 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time2.2 ns
TypeMOSFET