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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance105 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time30 ns
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2 nC
JPHTS8541290100
Package / CaseSOT-346-3
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RUR020N02TL
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time30 ns
BrandROHM Semiconductor
SeriesRUR020N02
Factory Pack Quantity3000
Unit Weight0.004344 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerROHM Semiconductor
DescriptionMOSFET SW MOSFET MID PWR N-CH 20V 2A
USHTS8541290095
Pd - Power Dissipation1 W
Part # AliasesRUR020N02
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time17 ns