参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
CAHTS8541290000
ProductPower MOSFETs
Minimum Operating Temperature- 55 C
Length10.1 mm
Height2.4 mm
Typical Turn-On Delay Time24 ns
ImageSTMicroelectronics STD110N8F6
Product CategoryMOSFET
Transistor Type1 N-Channel
Typical Turn-Off Delay Time162 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingReel
PackagingCut Tape
PackagingMouseReel
DescriptionMOSFET LGS LV MOSFET
Width6.6 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandSTMicroelectronics
Factory Pack Quantity2500
Qg - Gate Charge150 nC
MXHTS85412999
Product TypeMOSFET
ManufacturerSTMicroelectronics
RoHS Details
SeriesSTD110N8F6
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time48 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation167 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time61 ns
TypeSTripFET