参数项参数值
参数项参数值
Forward Transconductance - Min3.8 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance810 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time47 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge16 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time22 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
SeriesFCD5N60
BrandON Semiconductor / Fairchild
Unit Weight0.009184 oz
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FCD5N60TM
Product CategoryMOSFET
Pd - Power Dissipation54 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
TradenameSuperFET
Number of Channels1 Channel
Rise Time40 ns
Moisture Sensitivity Level1 (Unlimited)