参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Collector-Emitter Saturation Voltage- 0.65 V
Width1.3 mm
DC Collector/Base Gain hfe Min220
Height0.94 mm
Length2.9 mm
KRHTS8541219000
Package / CaseSOT-23-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor BC858BLT1G
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesBC858BL
Unit Weight0.001376 oz
ManufacturerON Semiconductor
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 100mA 30V PNP
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation225 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)